Part Number Hot Search : 
CSM1200 12101R0 V201HB34 80C19 HD66712U LTL2P 60000 MXXXH
Product Description
Full Text Search
 

To Download MRF607 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MRF607
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
* * * * 12.5V Silicon NPN, To-39 packaged VHF & UHF Transistor 1.75 Watt Minimum Power Output @ 12.5V, 175 MHz 11.5 minimum Gain @ 12.5V, 175 MHz 50% Efficiency @ 12.5V, 175 MHz
12 3
1. EMITTER 2. BASE 3. COLLECTOR
TO-39
(common collector)
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 16 36 4.0 330 Unit Vdc Vdc Vdc mA
Thermal Data
P
D Total Device Dissipation @ TA = 25C Derate above 25C 3.5 28 Watts mW/ C
MSC1322.PDF 10-25-99
MRF607
ELECTRICAL SPECIFICATIONS (Tcase = 25C)
STATIC (off)
Symbol BVCES BVCEO BVEBO ICEO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0 Vdc) Collector-Emitter Sustaining Voltage (IC=25 mAdc, IB=0) Emitter-Base Breakdown Voltage (IE = .5 mA, IC = 0) Collector Cutoff Current (VCE = 10 Vdc, IB = 0) 36 16 4.0 Value Typ. Max. .3 Unit Vdc Vdc Vdc mA
(on)
HFE DC Current Gain (IC = 50 mAdc, VCE = 5.0 Vdc) 20 150 -
DYNAMIC
Symbol COB Test Conditions Min. Output Capacitance (VCB = 12 Vdc, IE = 0, f = 1.0 MHz) Value Typ. Max. 15 Unit pF
FUNCTIONAL
Symbol GPE Power Gain Test Conditions Min. Test Circuit-Figure 1 Pout = 1.75W, VCE = 12.5Vdc f = 175 MHz Test Circuit-Figure 1 Pout = 1.75W, VCE = 12.5Vdc f = 175 MHz 11.5 Value Typ. Max. Unit dB
Collector Efficiency C
50
-
-
%
MSC1322.PDF 10-25-99
MRF607
+ L3 C5 C6 Vcc = 12.5 V
L2 PIN (R S=50 OHMS) C1 L1
C4 POUT (RL=50 OHMS)
C2
L4
C3
Figure 1 - 175 MHz RF AMPLIFIER CIRCUIT FOR GPE, AND EFFICIENCY SPECIFICATIONS.
C1 C2 C3, C4 C5 C6 .
2.7-15 pF, ARCO 461 9.0-180 pF, ARCO 463 5.0-80 pF ARCO 462 1000 pF UNELCO 5 F, 25 Vdc,
L1 L2 L3 L4
1 TURN #20 AWG, 3/8" I.D. 3 TURNS #20 AWG, 3/8" I.D. 0.22 H MOLDED CHOKE 0.15 H MOLDED CHOKE WITH TANTALUM FERROXCUBE 56-590-65-3B BEAD ON GROUND LEAD
MSC1322.PDF 10-25-99
MRF607
MSC1322.PDF 10-25-99


▲Up To Search▲   

 
Price & Availability of MRF607

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X